Microsemi Corp., a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, announced a new high power monolithic microwave surface mount (MMSM) series-shunt SP2T PIN diode reflective switch, the MPS2R10-606. The device is optimized for high frequency (HF),very high frequency (VHF) and ultrahigh frequency (UHF) high power transmit/receive (T/R) switching in applications such as magnetic resonance imaging (MRI) receive arrays and first responder, military, aviation and marine radio communications. The new device leverages Microsemi's unique 50-year history supplying premier PIN diode products for challenging radio frequency (RF) power, small signal switching and receiver power limiting functions.
"Our MRI and communication radio customers are requiring an increased level of functional integration coupled with form factor reduction, which is consequently driving the need for PIN diode switches with higher density, functionality and performance," saidVincent Cannistraro, senior director and business unit manager for Microsemi's RF/Microwave Discrete Products business unit. "Our new PIN diode switch technology in a compact MMSM package format is a key enabler here, and permits designs to be implemented at significantly higher power levels compared with traditional gallium-arsenide (GaAs), metal-semiconductor field-effect transistor (MESFET) and silicon-on-SOI solutions."
In addition, the MPS2R10-606's technology supports public safety, aviation, marine, and military handheld and rack mount radio hardware (JTRS), which are critical in combating multiple international and domestic threats. As Microsemi's PIN diode MMSM switches are nonmagnetic, they offer the high density and performance required for the implementation of MRI receive arrays.
According to a recent survey by Strategy Analytics, the land-based military radio market alone will approach $6.5 billion in 2024. Microsemi's MPS2R10-606 switch is ideal for this growing market, as it combines compact size, fast switching and high CW power handling capability.
Microsemi: Continued Leadership in PIN Diodes
Microsemi continues to develop premier PIN diode products and currently offers a comprehensive line of RF and microwave GaAs and silicon PIN diodes, which range from ultralow junction capacitance (Cj) beam lead PIN diodes capable of switching up to 40 GHz, to high power PIN diodes designed to handle 60 decibel-milliwatts (dBm) CW power. Designed for low intermodulation switching and attenuation, these PIN diode products cover a wide variety of applications including mobile and fixed communications systems, radar systems to Ka-band frequencies, wideband electronic warfare (EW) systems, test instrumentation, MRI systems, cellular base stations, software-defined radios (SDRs), T/R switch control and duplexers. Microsemi's PIN diodes are available in die, flip chip, beam-lead, stripline, glass axial, plastic, ceramic, low magnetic, hermetic, wafer-scale and surface-mount options.
Key features of the MPS2R10-606 include:
- 100W CW power handling capability
- Low insertion loss: 0.2 dB
- High isolation: 55 dB
- Low return loss: 15 dB
- High switching speed: 500 nS
- Stable low leakage passivation with rugged glass body
The Microsemi MPS2R10-606 is available in a highly integrated, compact 2.03 mm x 1.27 mm wafer-scale format, is RoHS compliant, and is supplied with gold plated terminations. For more information, visit http://www.microsemi.com/existing-parts/parts/136674. For product availability, sales or technical information, contact Sales.Support@microsemi.com.