NXP’s MRF7S24250NLDMOS power transistor operates from 2.4 to 2.5 GHz with 250 W CW output power at 1 dB compression. It replaces magnetrons and other vacuum tubes that currently power industrial heating, drying and welding equipment as well as medical systems used for skin treatment, bloodless surgery and cancer therapies.
The product provides accurate power control over its full dynamic range up to 250 W and allows both the frequency and phase to be changed. This enables the host system to direct RF energy only where needed. The transistor also has an operating life of hundreds of thousands of hours significantly greater than magnetrons. During its lifetime, the RF output power and other performance characteristics will not degrade, providing a stable operating environment and virtually eliminating the need for periodic maintenance or replacement.
With a drain bias of 32 V, the MRF7S24250N has 14.7 dB gain and 55 percent drain efficiency. Internally matched at the input and output, the device will withstand an impedance mismatch greater than 10:1 with 3 dB overdrive without degradation. It is housed in an OM-780 overmolded plastic package, which has up to 30 percent lower thermal resistance than air-cavity ceramic packages, reducing heat dissipation and allowing the transistor to operate at lower junction temperatures.
To ease the transition from vacuum tubes to solid-state, the MRF7S24250N is supported by NXP’s RF Power Tool system. The tool is an easy-to-use PC-driven hardware and software platform that modifies and evaluates the characteristics of an amplifier using the MRF7S24250N (or another compatible NXP LDMOS transistor), without requiring expensive test equipment or extensive RF technical knowledge.
NXP Semiconductor (formerly Freescale)
Tempe, Ariz.
www.freescale.com/mrf7s24250n