High Power Efficiency GaAs FETs
The MGF0900 series N-channel Schottky gate GaAs FETs are designed for use in UHF-band power amplifier applications and provide versatility where power is a priority. The models MGF0909A, MGF0910A and MGF0911A 2.3 GHz GaAs FETs are all included in the series. The model MGF0909A provides superior 45 percent power-added efficiency compared to alternative solutions with a high power gain of 11 dB at 20 dBm power input at 2.3 GHz. High power output is typically 38 dBm. The model MGF0910A provides the same power capabilities as the MGF0909A unit for class A operation. The model MGF0911A, which is provided in a larger package, also is a class A operation device with a high power-added efficiency of 40 percent (typ). At 2.3 GHz operation, the device features a high output power of 41 dBm (typ) and a high power gain of 11 dB (typ).
Mitsubishi Electric Europe,
Hatfield, Hertfordshire, UK (01707) 276100.
These surface-mount MOSFETs are designed for surface-mount VHF and UHF communication applications in the 100 to 500 MHz frequency range. The WRLS-01xx series class A MOSFETs feature a P1dB of 30, 33 and 36 dBm from a 7.5 to 10 V supply and provide over 12 dB gain over the 100 to 200 MHz band. The WRLS-04xx series class A MOSFETs feature a P1dB of 30, 33 and 35.4 dBm from a 7.5 to 10 V supply and provide more than 10 dB gain over the 400 to 500 MHz band.
Richardson Electronics Ltd.,
LaFox, IL (800) 348-5580 or (630) 208-2200.