RFMW Ltd. announces design and sales support fora discrete, 1600-Micron, GaAs pHEMT FET rated at 32.5 dBm P1dB. TriQuint Semiconductor’s TGF2160 is the latest addition to a family of high-efficiency FETs constructed without via holes thereby allowing for self-biasing and eliminating the need for a negative supply voltage.
Designed using TriQuint’s proven 0.25 um pHEMT process which optimizes power and efficiency at high drain bias operating conditions, the TGF2160 offers 63% PAE at 8 V and 517 mA Idss. Applications include military, hi-rel defense and aerospace, test and measurement and commercial, broadband amplifiers up to K-band where high efficiency and linearity are required.
A silicon nitride, protective overcoat layer provides a level of environmental robustness and scratch protection. The TriQuint TGF2160 is available in a 0.41 x 0.54 x 0.10 mm chip suitable for eutectic die attach.
|
Part |
12 GHz |
DC |
Gate |
Die Size |
||||||||
|
Vds = 8V, Ids = 50% Idss |
Vds = 2V |
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|
P1dB |
G1dB |
PAE |
NF |
Idss |
Gm |
Vp |
BVgd |
BVgs |
Rth |
|||
|
22 |
14 |
55 |
1 |
58 |
70 |
-1.0 |
-15 |
-15 |
88 |
0.25x180 |
410 x 340 |
|
|
24 |
14 |
58 |
0.9 |
81 |
97 |
-1.0 |
-15 |
-15 |
62.5 |
0.25x250 |
410 x 340 |
|
|
26 |
13 |
55 |
1.1 |
129 |
155 |
-1.0 |
-15 |
-15 |
60 |
0.25x400 |
410 x 340 |
|
|
28 |
12 |
55 |
1.4 |
194 |
232 |
-1.0 |
-15 |
-15 |
54 |
0.25x600 |
410 x 340 |
|
|
29.5 |
11.5 |
56 |
– |
259 |
309 |
-1.0 |
-15 |
-15 |
33 |
0.25x800 |
410 x 540 |
|
|
31 |
11 |
57 |
– |
388 |
464 |
-1.0 |
-15 |
-15 |
31 |
0.25x1200 |
410 x 540 |
|
|
32.5 |
10.4 |
63 |
– |
517 |
619 |
-1.0 |
-15 |
-15 |
31 |
0.25x1600 |
410 x 540 |
|
