advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
advertisment Advertisement
Industry News / Amplifiers / Semiconductors / Integrated Circuits / Software & CAD

Memory Effect Reduction for LDMOS Bias Circuits

Memory effects have taken a very important role in today's design of base station power amplifiers. For example, they are responsible for limiting the cancellation when pre-distortion is applied to a power amplifier system.<sup>1</sup> This study show...

February 1, 2003
/ Print / Reprints /
| Share More
/ Text Size+
Electrical memory effects are defined as changes in amplitude and phase of distortion components caused by modulation frequency. There are several ways of measuring memory effects. One of the most common is to plot the phase and amplitude of the distortion parameters with respect to the tone spacing in...
To view the full article, please register or login.

Sign-In

Forgot your password?

No Account? Sign Up!

Get access to premium content and e-newsletters by registering on the web site.  You can also subscribe to Microwave Journal magazine.

Sign-Up

advertisment Advertisement