How small can a GaN power amplifier be? RFHIC’s molded styled power amplifier (GaN on SiC) pumps out 20 W covering 20 MHz to 1000 MHz.
RFHIC, a manufacturer of active RF & MW components and hybrids with a heavy focus on GaN and GaAs technology, introduces a molded styled power amplifier (GaN on SiC) generating 20 W and covering 20 to 1000 MHz. RWS05020-10 is based on GaN on SiC Transistor, promising a solid reliability at high temperature; it provides a 36 dB of Gain and a typical 43 dBm @ P3 dB with 50% efficiency. Moreover, the physical size of RWS05020-10 is only 2.1” x 1” x 0.5” which is much smaller than an Apple’s new iPod nano or a typical business card.
GaN device is actively evolving, improving reliability while becoming more cost-effective. RFHIC have been developing more thermally robust designs, and the substrate material has been migrated from Si to SiC, enhancing reliability and efficiency. Nowadays, high efficiency directly translates to “Green” which is one of main concerns for policy makers and our end users. End users are also calling for smaller systems, of course, without sacrificing performance. Especially for sub L-band frequencies, there are many obstacles to overcome in order to make power amplifiers small.
Dr. Samuel Cho, Chief Technical Officer of RFHIC Corporation, said, “Through our engineers’ hard work and technical breakthrough we are proud to announce that RWS05020-10 is one of our answers to customers’ very need. RWS05020-10 is a miniaturized wideband amplifier, a newly developed hybrid. We incorporated Pin Type for DC and RF port to make this product easy to use. It has a bolted down structure and operates on 28V with 51dBm @ OIP3. We believe our military, telecommunication, and broadcasting customers can set themselves apart from the competition if they utilize these kinds of RFHIC products.”