RFMD®, a global leader in the design and manufacture of high performance radio systems and solutions for applications that drive mobile communications, is conducting a live demonstration of its Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) high power transistor line-up for UMTS and is displaying its latest performance results for WiMAX applications at Booth 1207.

The demonstration features RFMD's new GaN HEMT high power transistor line-up deployed in a digital pre-distortion system. Digital pre-distortion improves the linear efficiency performance of the high power transistor line-up with error correction for wireless infrastructure applications. RFMD will highlight latest performance data including:

  • Drain efficiency

  • Saturated power output

  • Gain

  • Linearity

RFMD has been selected by the IMS to present two technical papers focused on GaN technology, including:

  • WE3B-3 "Performance and RF Reliability of GaN-on-SiC HEMTs Using Dual-Gate Architectures", Rama Vetury. This paper will be presented today, June 14, from 1:20-3:00 p.m. PT at Moscone 304.

  • TH1B-3 "Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction", Matthew Poulton. This paper will be presented on June 15, from 8:00-9:40 a.m. PT at Moscone 304.

RFMD's portfolio of highly integrated RF components and system solutions includes its transmit modules and power amplifiers (PA) for GSM/GPRS, GSM/GPRS/EDGE, CDMA and WCDMA handsets, the company's POLARIS™ TOTAL RADIO™ transceiver solutions for GSM/GPRS and GSM/GPRS/EDGE handsets, and its highly-integrated Bluetooth®, wireless LAN (WLAN) and GPS solutions.

At its booth, RFMD is displaying wireless handsets and other wireless mobile devices featuring the company's solutions from customers such as Motorola, Nokia, Samsung, Sony Ericsson, LG, NEC, Research In Motion, Palm and others.