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Amplifiers / Passive Components / Semiconductors / Integrated Circuits

RFMD® Completes Qualification of First Generation Gallium Nitride (GaN) Process Technology

November 21, 2007
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NEW YORK, NEW YORK - NOVEMBER 21, 2007 - RF Micro Devices, (NASDAQ GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, announced at its analyst day today it has completed the technical qualification of its first generation 48V Gallium Nitride (GaN) process technology. RFMD is the world's leading manufacturer of compound semiconductors, and the Company leveraged its existing manufacturing assets and proven expertise in high volume compound semiconductor design and fabrication to deliver the excellent thermal and RF performance of its new GaN process technology. Pre-production volume shipments of RFMD's 48V GaN technology have commenced to customers in multiple end markets. RFMD's 48V GaN process technology is ideally suited to address the growing customer requirements for higher power, higher efficiency and wider bandwidth. The Company is targeting multiple high-growth applications, including high-linearity CATV line amplifiers, military radar applications, wide bandwidth wireless infrastructure power amplifiers and power modules for revolutionary new high-lumen light generation applications. "We have multiple products - both in production and in development - that will benefit from the insertion of our new GaN technology," said Bob Van Buskirk, president of RFMD's Multi-Market Products Group. "This new process technology provides an immediate competitive advantage to our newly formed Multi-Market Products Group, and the continued deployment of our GaN technology across multiple end markets will support our expectations for revenue and margin expansion as our Multi-Market Products Group continues to grow." Van Buskirk continued, "RFMD's new GaN process technology delivers higher efficiency, wider operating bandwidth and greater ruggedness than currently available technologies. These performance characteristics are supporting favorable design activity across multiple high-growth applications." Technical Overview RFMD's high efficiency, high power GaN process technology exhibits best-in-class RF performance at 48V with 5.6W/mm average Psat, over 60% average Peak PAE and 24dB average Small Signal Gain measured at 2.1GHz frequency. The intrinsic electrical properties and outstanding reliability of RFMD's GaN technology enable improvements over bandwidth, power and efficiency, versus currently available, conventional technologies. The median time to failure (MTTF) at 180 degrees Celsius (operating junction temperature) is calculated to be greater than 1x106 hours using three-temperature testing over multiple wafer lots.

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