- Buyers Guide
Aerospace & Defense Electronics Supplement
Early Returns: U.S. Export Control Reform Positive
A&D Test & Measurement
Efficient Design and Analysis of Airborne Radomes
To achieve higher power levels for Laterally Diffused MOS (LDMOS) transistors, NXP has developed a 50 V process that features the highest power density for LDMOS to date and is featured in the company’s BLF57x family. The excellent power capabilities, gain, efficiency, linearity and reliability of LDMOS transistors make them the perfect choice for RF power amplifiers. The BLF57x devices deliver peak power levels between 20 and 1200 W. In Industrial, Scientific and Medical (ISM) applications, the outstanding bandwidth, ruggedness and thermal resistance of this HV LDMOS process are particularly critical features. Using advanced packages, the BLF57x family achieves thermal resistances as low as 0.14 K/W and can operate between 10 to >500 MHz. The BLF57x LDMOS transistors are designed to withstand, besides a VSWR of 10:1, an abrupt mismatch in the transmitter at full power.
Eindhoven, The Netherlands,
RS No. 304
Get access to premium content and e-newsletters by registering on the web site. You can also subscribe to Microwave Journal magazine.