To achieve higher power levels for Laterally Diffused MOS (LDMOS) transistors, NXP has developed a 50 V process that features the highest power density for LDMOS to date and is featured in the company’s BLF57x family. The excellent power capabilities, gain, efficiency, linearity and reliability of LDMOS transistors make them the perfect choice for RF power amplifiers. The BLF57x devices deliver peak power levels between 20 and 1200 W. In Industrial, Scientific and Medical (ISM) applications, the outstanding bandwidth, ruggedness and thermal resistance of this HV LDMOS process are particularly critical features. Using advanced packages, the BLF57x family achieves thermal resistances as low as 0.14 K/W and can operate between 10 to >500 MHz. The BLF57x LDMOS transistors are designed to withstand, besides a VSWR of 10:1, an abrupt mismatch in the transmitter at full power.

Key Applications

  • Broadcast transmitters
  • Medical imaging
  • RF plasma lighting
  • RF heating
  • Particle accelerators and storage rings
  • Laser power supplies
  • Solid-state cooking

Key Features

  • Easy power control
  • Integrated ESD protection
  • Outstanding, field proven ruggedness
  • High efficiency of 70 percent
  • Excellent thermal stability
  • Designed for broadband operation (10 to 500 MHz)

NXP Semiconductors,
Eindhoven, The Netherlands,
RS No. 304