As the 200 mm wafer test market continues to expand, MPI Corp. is introducing a new fully automatic wafer probe system. The TS2500-RF addresses multiple production test market requirements which include radio frequency (RF) communication devices and discrete passive components.
II-VI completed the acquisition of ANADIGICS on March 15, after a surprisingly prolonged auction that included GaAs Labs, II-VI and an unnamed Chinese company. The final price of $78 million was 2.4 times higher than the original deal secured by GaAs Labs.
Advancing semiconductor technology, X-FAB Silicon Foundries is putting itself at the vanguard of wideband gap semiconductor production by announcing the availability of its silicon carbide (SiC) offering from its wafer fab in Lubbock, Texas.
Qorvo Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced it has successfully scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce monolithic microwave integrated circuits (MMICs) on six-inch wafers. The transition from 4-inch to 6-inch wafers is expected to approximately double Qorvo's GaN on SiC manufacturing capacity and favorably impact manufacturing costs – significantly accelerating the affordable manufacture of RF devices.
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® 11 platform, the industry’s first RF SOI technology built on GLOBALFOUNDRIES’ 130 nm 300 mm RF technology platform.
WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry, announced that it has surpassed 1 million cumulative wafer shipments to customers in the mobile PA, Wi-Fi, wireless infrastructure and optical markets.
United Microelectronics Corp. (UMC) and Fujitsu Semiconductor Ltd. have announced an agreement for UMC to become a minority shareholder of a newly formed subsidiary of Fujitsu Semiconductor that will include its 300 mm wafer manufacturing facility located in Kuwana, Mie, Japan.
RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has signed a $9.7 million agreement with the Manufacturing and Industrial Technologies Directorate within the Air Force Research Laboratory(AFRL) to transfer and produce a 0.14 micron Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. The technology will be scaled to 6-inch diameter wafers using RFMD's industry-leading 6-inch GaN-on-Silicon Carbide (SiC) manufacturing line.