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Qorvo set to double GaN capacity

MWJ talks one-on-one with James Klein, Qorvo's president of infrastructure and defense products

Qorvo Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced it has successfully scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce monolithic microwave integrated circuits (MMICs) on six-inch wafers. The transition from 4-inch to 6-inch wafers is expected to approximately double Qorvo's GaN on SiC manufacturing capacity and favorably impact manufacturing costs – significantly accelerating the affordable manufacture of RF devices.


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RFMD awarded $9.7M Air Force contract to produce MM Wave GaN integrated circuits

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has signed a $9.7 million agreement with the Manufacturing and Industrial Technologies Directorate within the Air Force Research Laboratory (AFRL) to transfer and produce a 0.14 micron Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. The technology will be scaled to 6-inch diameter wafers using RFMD's industry-leading 6-inch GaN-on-Silicon Carbide (SiC) manufacturing line.


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