Semiconductors / Integrated Circuits

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RF Micro Devices announced it has qualified its GaN1 power semiconductor process technology for 65 V operation. The high reliability power semiconductor process technology supports RFMD's GaN-based power semiconductor product designs and is also available to foundry customers through RFMD's Foundry Services business unit. Previously, RFMD's GaN1 power semiconductor...

STMicroelectronics and Circuits Multi Projets® (CMP) have announced that the CMOS 28 nm process from STMicroelectronics is now available for prototyping to universities, research labs and companies through the silicon brokerage services provided by CMP. The introduction of the 28 nm CMOS process builds on the successful collaboration that...

At IMS 2011, Skyworks Solutions Inc. , an innovator of high reliability analog and mixed signal semiconductors enabling a broad range of end markets, introduced connectorized, high power filters for military, homeland security, airborne and high-end commercial transceiver applications. These smaller, lighter and more portable solutions offer customers significant...

In an awards ceremony held at IMS 2011, NXP Semiconductors N.V. announced the grand prize winner of its first-ever High Performance RF (HPRF) Design Challenge. After an intense final round of judging, "A 2-kW Amplifier for a Portable 449 MHz Spaced Antenna Wind Profiler Radar" by Brad Lindseth was...

The Semiconductor Industry Association (SIA), representing US leadership in semiconductor manufacturing and design, announced that Steven Laub , President and CEO of Atmel Corp. , and Tunc Doluca , President and CEO of Maxim Integrated Products Inc. , have joined the SIA Board of Directors. Both CEOs were approved...

At IMS 2011 in Baltimore, TriQuint Semiconductor Inc. , a leading RF solutions supplier and technology innovator, announced several milestones related to its industry leading Gallium Nitride (GaN) developments. Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes...

ADI introduced two 1 W, 2-stage RF driver amplifiers featuring the ability to cover the entire cellular frequency range used in wireless communications systems. The highly-integrated are pin-compatible, easy-to-tune and integrate two stages of gain, thereby saving significant board space when compared to traditional discrete designs. ADI also introduced...

NXP Semiconductors N.V. has introduced its eighth generation (Gen8) LDMOS RF power transistors for wireless base stations – allowing signal bandwidths up to 60 MHz and providing optimized I/O matching structures to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers. The transistors were introduced during IMS...