Semiconductors / Integrated Circuits

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Cree Inc. announced that it has acquired a portfolio of patents and patent applications related to semi-insulating silicon carbide (SiC) material and power device technology from Daimler AG. The portfolio consists of approximately 20 patent families, including issued patents in the United States, Germany, Japan and China. US Patent...

Nitronex and Modelithics have announced a collaboration to create state-of-the-art nonlinear models for Nitronex’s high power gallium nitride (GaN) devices. Combining the Modelithics team’s 35+ years of modeling experience with Nitronex’s industry-leading GaN power devices will allow power amplifier designers to achieve best-in-class performance with faster time to market....

The GaAs industry is creating innovations designed to stave off the dual challenges of integration and low-cost silicon technologies. However, Heterojunction Bipolar Transistor (HBT) and High Electron Mobility Transistor (HEMT) processes will continue to underpin the commercial market for Gallium Arsenide (GaAs) devices, which will be worth $4 to...

Hittite Microwave Corp. , a supplier of complete MMIC-based solutions for communication and military markets, has introduced the HMC-C070 MicroSynth™ product, which is a fully integrated broadband synthesizer module. Operating from 5.5 to 10.5 GHz, the HMC-C070 MicroSynth delivers excellent phase noise performance, and is ideal for military radar,...

December 2009 Puzzler Test your knowledge of RF and microwave terms with this month's Industrial, Scientific and Medical themed crossword puzzle November 2009 Puzzler Test your knowledge of RF and microwave terms with this month's Passive Components themed crossword puzzle October 2009 Puzzler Test your knowledge of RF and...

RF Micro Devices Inc. (RFMD) announced RFMD® has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process technology. The purchase order is for RFMD's RFG1M09180 180 W GaN broadband power transistor (BPT) and...

RF Micro Devices Inc. (RFMD®) announced that RFMD has qualified and released the RF3931, a 48 V, 30 W gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications. The RF3931 is RFMD's first GaN product to achieve full product qualification, a process through which RF...