RF & Microwave Industry News

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 TE Connectivity, a world leader in connectivity, announced the official opening of its TE Wearables Lab in Menlo Park, Calif. Exclusively focused on wearable technologies across consumer, medical, industrial and defense businesses, the lab serves as a collaboration center for TE's team of engineers, scientists and its customers throughout the design process. 

Mercury Systems Inc., announced that its Mercury Defense Systems subsidiary recently received a $1.2 million order from a leading international aerospace and defense company for radar environment simulation equipment to support European Fighter Aircraft (EFA).

 L-3 Southern California Microwave announced that it has been selected by Lockheed Martin’s Mission Systems and Training (LM MST) business to provide its MICRO Secure Digital Data Link (MICRO SDDL) as the secure command & control and ISR communications backbone for the U.K. Ministry of Defence’s (MOD) digital Desert Hawk III DDL small unmanned aircraft system (SUAS) platform. 

 API Technologies Corp., a leading provider of high performance RF/microwave, power and security solutions for high-reliability applications, has added the APPREG2 to its line of radiation-hardened (rad-hard) power management products.  

 A new report from Juniper Research has found that mobile phone and tablet users will make 195 billion mobile commerce transactions annually by 2019, up from 72 billion this year. 

 RFMW Ltd. announces design and sales support for Carlisle Interconnect Technologies SMA precision swept right angle adapters.  

 TDK Corp. announces the new EPCOS duplexer for LTE Band 1, which at 60 dB features very high isolation for both the Tx and Rx paths.  Based on SAW technology, the B8651duplexer has a miniature footprint of just 1.8 mm x 1.4 mm. 

The European Space Agency has awarded Arralis a contract to deliver a 94 GHz radar chipset with space end-use applications, such as unmanned landing of spacecraft and to identify and avoid space debris.

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, introduced the industry’s highest thermal and wideband performance GaN device with a 125 W continuous wave (CW) GaN-on-SiC transistor.

Barry Industries introduces a RoHS-compliant flange mount RF termination that dissipates 1000 W with favorable return loss over a DC to 4.5 GHz bandwidth. The thick film on beryllium oxide (BeO) T50R0-1000-6X termination, with its internally matched circuit architecture, has 20 dB or better return loss from DC to 2.5 GHz and 17 dB to 4.5 GHz. The flange and input tab are constructed of robust silver plated copper.