Industry News

High-power RFIC Markets Going from Strength to Strength

ABI Research’s optimistic forecasts for the penetration of high-powered RF integrated circuits into the mobile wireless base station market have been borne out by the latest market developments. According to research director Lance Wilson, “Compared to the discrete devices they can replace, high-power RFICs take up less circuit board...
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Total Available Market for Microwave Tubes Approaching $1 B

While microwave and millimeter-wave high-power vacuum electron devices (VED) remain “below the radar” of many industry observers, the total available market (TAM) for this segment is nearly $1 B. Despite its size, and although these tubes (valves) remain essential elements in specialized military, scientific/medical and space communications applications, this...
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Around the Circuit

Industry News EMS Technologies Inc. announced that it has signed a definitive agreement to acquire Satamatics Global Ltd. , a global provider of Inmarsat IsatM2M (machine-to-machine or “M2M”) services, headquartered in Tewkesbury, UK. The acquisition complements the company’s existing Iridium- and Inmarsat-based tracking solutions. EMS expects the acquisition to...
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Integrated Power Dividing Antenna Receivers

This article reviews four designs of highly integrated front-end receivers that use a power dividing antenna. Through this antenna, a discrete power divider function can be achieved by the antenna itself, yielding a compact receiver front-end.
Nowadays, microwave antennas are widely used, especially in achieving the objective of maximal integration for personal communication systems. These antennas can be mounted on the surface of high performance aircrafts, satellites, missiles, mobile phones and others. Integrated antennas are a combination of solid-state devices and circuits with printed antenna...
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Developing Highly Ruggedized Silicon MOSFETs for RF Amplifier Applications

This article describes a new vertical silicon MOSFET that has been developed specifically for high power RF amplifier applications. The High Voltage Vertical Field Effect Transistor (HVVFET™) is engineered with unique structural features that produce h...
High power RF amplifiers are expected to provide high primary performance parameters such as output power, gain and efficiency, as well as operate reliably for more than 20 years in the field. Traditionally, designers have built these amplifiers using components fabricated in cost-effective silicon-based technologies such as bipolar or...
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Optimizing 4 GHz Mission Critical Networks

There are a number of applications and uses for the 4.4 to 4.99 GHz band. These include the 4.4 to 4.5 GHz band, which is designated in the US and NATO countries for military fixed and mobile communications. Typical uses include point-to-point microwave links and telemetry applications such as...
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