RF & Microwave Industry News

THERMAL DESIGN CONSIDERATIONS FOR WIDE BANDGAP TRANSISTORS

The effect the number of gate fingers, gate geometry and epitaxial layer thickness has on the peak junction temperature of high power gallium nitride and silicon carbide transistors
TECHNICAL FEATURE THERMAL DESIGN CONSIDERATIONS FOR WIDE BANDGAP TRANSISTORS Abstract: The peak junction temperature of a transistor is an important factor in determining its lifetime and output power degradation over time. Many design parameters determine the temperature rise in the semiconductor, including the transistor performance, semiconductor material and device...
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HIGH POWER RF LDMOS TRANSISTORS FOR AVIONICS APPLICATIONS

The inherent advantages of laterally diffused metal oxide semiconductor (LDMOS) amplifiers to avionics transponders
TECHNICAL FEATURE HIGH POWER RF LDMOS TRANSISTORS FOR AVIONICS APPLICATIONS Abstract: This article describes the inherent advantages of using laterally diffused metal oxide semiconductor (LDMOS) amplifiers in high power avionics transponder applications. In comparing this technology to bipolars, key device features such as gain, linearity, switching, thermal issues and...
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SIMULATION OF INTERDIGITATED STRUCTURES USING TWO-COUPLED-LINE MODELS

A simple technique to simulate circuits with multiple coupled lines in commercial simulators without suitable models
TECHNICAL FEATURE SIMULATION OF INTERDIGITATED STRUCTURES USING TWO-COUPLED-LINE MODELS Abstract: Some commercial microwave CAD programs do not incorporate models for more than three coupled lines. This fact is especially critical in the design and analysis of multiple-line planar structures, such as interdigital, combline and hairpin filters, meander lines, spiral...
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LOW NOISE VCOS: KEY COMPONENTS FOR BASE STATIONS

Fundamentals for the design and use of VCOs
TUTORIAL LOW NOISE VCOS: KEY COMPONENTS FOR BASE STATIONS FRANK BABERG Tekelec Temex Munich, Germany   The great economic success of modern mobile radio systems such as GSM and the digital communication system (DCS) means even greater utilization of the capacity of existing channels. Therefore, it is immensely important...
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FRACTIONAL OUT-OF-BAND POWER FORMULAS FOR BPSK, QPSK AND MSK

Closed-form expressions for out-of-band power for classical binary phase-shift keying (BPSK), quadrature phase-shift keying (QPSK) and minimum-shift keying (MSK) modulation
TECHNICAL NOTE FRACTIONAL OUT-OF-BAND POWER FORMULAS FOR BPSK, QPSK AND MSK FRANK AMOROSO Consultant Santa Ana, CA   Fractional out-of-band power (FOBP) has for some time been a standard metric of spectral containment for digital data signals.1 For any given modulation scheme the FOBP can be measured experimentally or...
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News From Washington

News From Washington F/A-18 Radar Production Contracts Awarded Raytheon Co. has received two contract awards for the production of the AN/APG-73 radar for installation in US Navy, US Marine Corps and Royal Australian Air Force (RAAF) F/A-18 aircraft. An award from the Boeing Co. totals approximagely $467.2 M and...
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International Report

International Report Thomson-CSF Wins BIFF Contract French contractor Thomson-CSF Comsys has been awarded a Euro 38 million contract covering the production of 1500 Battlefield Identification Friend-or-Foe (BIFF) systems for France's armed forces. As currently structured, the French BIFF effort anticipates acquisition of 5400 units in three production lots. The...
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Commercial Market

Commercial Market Hong Kong Telecommunications Market Opens Up The Hong Kong government has opened up its telecommunications market by granting fixed network licenses to five companies and the right to operate international satellite services to 12 other applicants. PSINet HK Ltd., HKNet-Teligent Company Ltd., HK Broadband Network Ltd., Eastar...
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The Bookend

The Book End The Essential Guide to RF and Wireless Carl J. Weisman Prentice Hall PTR 232 pages; $34.99 ISBN: 0-13-025962-4 Here is a book on RF and wireless components and systems that is strictly intended for a nontechnical audience. It has two simple objectives: to provide a conceptual...
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Ultra-high Linearity GaAs Mixers

A new generation of mixers with outstanding intermodulation performance, minimum space requirements and remarkably low LO power levels
Ultra-high Linearity GaAs Mixers Infineon Technologies AG Munich, Germany Mixers are common devices in modern communication and signal processing systems. They can serve as up- and downconverters and are combined in modulators for different balanced or unbalanced configurations. Current consumption, IP3 performance and conversion loss are critical factors in...
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