Industry News

M2 Global Expands San Antonio Offices

In the world of high technology communications and specialized national defense contractor requirements, San Antonio's M2 Global truly impacts the global market. Its new headquarters expansion is just one sign of big things to come for M2 and the San Antonio community. The new 25,000-square-foot facility is located at...
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Modelithics and ATC Announce Availability of Global Models

Modelithics™ and American Technical Ceramics Corp. (ATC), a manufacturer of high performance electronic components, including capacitors and thin film circuits for a broad range of commercial and military applications, previously announced a collaboration to develop substrate-scalable models for a wide variety of ATC’s RF/microwave and Hi-Power passive components. The...
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Locus Features X-band Low Noise Amplifier

The Locus Microwave L61000 series high performance X-band low noise amplifier (LNA) is available in a variety of premium noise temperatures including 40K and 45K. This unit is intended for indoor or outdoor environments with custom, ruggedized packaging options to fit the customer’s needs. The L61000 series features an...
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AWR and Vector Fields Partner

Applied Wave Research Inc. (AWR®), a provider of high frequency electronic design automation (EDA) tools, and Vector Fields Ltd. announced at the 2006 IEEE MTT-S International Microwave Symposium that they have integrated Vector Fields’ Concerto™ three-dimensional (3D) electromagnetic (EM) modeling software into AWR’s Microwave Office® circuit design platform. Vector...
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Fairchild’s 4x4 mm Dual-band PA Saves Space, Extends Range in WLAN Applications

Building upon its portfolio of WLAN power amplifiers (PA), Fairchild Semiconductor introduces the FMPA2151, a highly integrated dual-band WLAN power amplifier module optimized to increase performance and reduce PCB board footprint in the latest 802.11a/bg WLAN applications, including notebooks, digital cameras and portable handsets. The high performance FMPA2151 offers...
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RFMD® Introduces GaN High Power Transistors

RFMD ® introduced a family of Gallium Nitride (GaN) high electron mobility transistor (HEMT) high power transistors and is sampling to top-tier cellular infrastructure and WiMAX base station customers. The sampling of these transistors represents the achievement of a baseline 0.5 um GaN high power transistor process by RFMD....
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