Articles Tagged with ''cmos''

STMicroelectronics, Soitec (Euronext) and Circuits Multi Projets^®(CMP) announced that ST’s CMOS 28 nm Fully Depleted Silicon-On-Insulator (FD-SOI) process, which uses innovative silicon substrates from Soitec, is now available for prototyping to universities, research labs and design companies through the silicon brokerage services provided by CMP.

RFaxis, a fabless semiconductor company focused on innovative, next-generation RF solutions for the wireless connectivity and cellular mobility markets, announced it will start volume production of its second-generation, pure CMOS-based RFeICs in Q4 2012. The new solutions will serve rapidly growing markets including smartphone and tablets, WLAN 11a/n/ac, ZigBee, wireless audio, smart energy and home automation.

Tahoe RF Semiconductor announces that it has licensed the latest GNSS (Global Navigation Satellite System) technology from Stanford University for the development of their next generation low-power, low-cost universal GNSS IC. The technology employs unique RF subsampling techniques that enable the receiver to support all the GNSS bands and be implemented on a single RF CMOS IC Technology

Javelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G power amplifier (PA), announced that Samsung Electronics Co. Ltd., has selected Javelin’s PA for the new Galaxy S Duos with dual SIM functionality. The Galaxy S Duos is a stylish Android-based smartphone that features a 4-inch touchscreen, 1 GHz processor, 5 megapixel camera, Bluetooth, GPS and Wi-Fi.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new RF switch from Peregrine Semiconductor Corp. The PE42430 switch was developed on Peregrine's patented UltraCMOS® technology and combines low insertion loss with high linearity, high isolation, and small package size, making it well suited for WLAN and Bluetooth® applications in the 2.4 GHz band, as well as general broadband switching applications.

M/A-COM Technology Solutions Inc. introduced a new high voltage CMOS driver for PIN diodes for use in military and commercial radio applications. The MADR-010574 is designed to work with M/A-COM Tech’s high power and high voltage PIN diodes.

Javelin Semiconductor Inc., innovator of the world’s first high-performance CMOS 3G PA, announced that Samsung Electronics Co. Ltd. is shipping Javelin’s PA in the new Galaxy Appeal for AT&T.

Peregrine Semiconductor Corp. (Peregrine) announced from booth # 2009 at the International Microwave Symposium (IMS2012) in Montreal, the SP3T PE42430 RF switch. Developed on Peregrine’s patented UltraCMOS® technology, the PE42430 switch combines low insertion loss with high linearity, high isolation, and small package size, making it well suited for WLAN and Bluetooth® applications in the 2.4 GHz band, as well as general broadband switching applications.

M/A-COM Tech announced a new Transmit/Receive module Driver IC that provides 6-Bit serial/parallel logic control and T/R switch control for multifunction T/R modules. 

Amalfi® Semiconductor Inc., an emerging leader in cost effective, high performance power amplifier solutions for cellular handsets, today announced that its AM7808 CMOS high-power, highefficiency transmit module has been selected by Samsung Electronics Co. Ltd. for multiple high-volume 2G handset platforms targeting emerging markets.