RFMW announced design and sales support for a high efficiency, GaN on SiC, power amplifier from Qorvo. Serving S-Band radar from 2.9 to 3.5 GHz, the Qorvo QPA3070 amplifier offers 150 Watts (52 dBm) of saturated output power with power gain of 28 dB. Power added efficiency is 58 percent for this 50 V device. The QPA3070 is packaged as a 7 x 7 mm QFN for reduced PCB real estate and ease-of-use. 100 percent DC and RF tested on-wafer to ensure compliance to electrical specifications.
150 W S-Band GaN Amplifier for Radar
HIgh Efficiency, GaN on SiC, Power Amplifier: QPA3070