Sumitomo Electric Device Innovations (SEDI) is now sampling the industry’s first family of 60 W GaN devices ideal for point-to-point radios and SATCOM applications for C- and X-Band. These GaN HEMTs are internally matched for 50 ohm systems. They are housed in an industry standard flange-mount package.
- Frequency: 5.85 to 6.75 GHz, 6.4 to 7.2 GHz and 7.7 to 8.5 GHz
- 60 W output power
- 40 percent efficiency
- Industry’s standard flange-mount package
SEDI is also sampling 20 W internally matched GaN devices for C- and X-Band. They are housed in a plastic surface mount package suitable for low cost assembly, and cover broader bandwidth than conventional GaAs IMFETs.
- Broadband coverage: 5.85 to 7.2 GHz and 7.1 to 8.5 GHz
- 20 W output power
- Surface mount package
30 and 100 W GaN IMFETs are also available in production. These new samples expand SEDI’s product portfolio of high frequency GaN devices. Samples are available direct or through distribution (www.cdiweb.com).
Sumitomo Electric Device Innovations USA Inc.
San Jose, CA