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Sumitomo Electric Device Innovations (SEDI) is now sampling the industry’s first family of 60 W GaN devices ideal for point-to-point radios and SATCOM applications for C- and X-Band. These GaN HEMTs are internally matched for 50 ohm systems. They are housed in an industry standard flange-mount package.

Key features:

  • Frequency: 5.85 to 6.75 GHz, 6.4 to 7.2 GHz and 7.7 to 8.5 GHz
  • 60 W output power
  • 40 percent efficiency
  • Industry’s standard flange-mount package

SEDI is also sampling 20 W internally matched GaN devices for C- and X-Band. They are housed in a plastic surface mount package suitable for low cost assembly, and cover broader bandwidth than conventional GaAs IMFETs.

Key features:

  • Broadband coverage: 5.85 to 7.2 GHz and 7.1 to 8.5 GHz
  • 20 W output power
  • Surface mount package

30 and 100 W GaN IMFETs are also available in production. These new samples expand SEDI’s product portfolio of high frequency GaN devices. Samples are available direct or through distribution (

Sumitomo Electric Device Innovations USA Inc.
San Jose, CA
(408) 232-9500