M/A-COM Technology Solutions Inc. extends its leadership position in high power semiconductors with the introduction of a new family of Gallium Nitride (GaN) RF power transistors. This new family of products targets L- and S-band pulsed radar applications and leverages M/A-COM Tech’s rich heritage of providing both standard and custom solutions to meet the most demanding customer requirements. M/A-COM Tech’s GaN on Silicon Carbide (SiC) products—offered as transistors and pallets—utilize a 0.5 micron HEMT process and exhibit attractive RF performance parameters with respect to power, gain, gain flatness, efficiency and ruggedness over wide-operating bandwidths. Featured benefits of M/A-COM Tech’s GaN products include high breakdown voltage, superior power density, and higher and broader frequency operation than Silicon.

“M/A-COM Tech leverages more than 30 years of experience in developing industry-leading high power transistors to deliver these top-quality GaN power devices,” stated Chuck Bland, Chief Executive Officer of M/A-COM Technology Solutions. “Our highly versatile family of GaN products offers customers a single solution combining both the high power handling and high-voltage operation typically found in silicon LDMOS devices, but with higher frequency performance more often associated with GaAs devices. Innovative solutions for demanding applications like these are what customers have come to expect from the First Name in Microwave—M/A-COM Tech.”

The latest ABI research shows increasing demand for high power, pulsed RF devices in S- and L-band air traffic control, marine, and military radar applications. “M/A-COM Technology Solutions’ Silicon based products have been a major force for high power, pulsed RF applications in the S- and L-band radar market, and the extension into GaN technology positions their product line for continued market leadership", said Lance Wilson, Research Director, RF Components & Systems.

M/A-COM Tech plans to release later this year additional products that target applications such as L-band radar, avionics, EW, and MILCOM, as well as general purpose devices. Engineering samples for GaN transistors and pallets are available for qualified customers today from stock.