Industry News

New ‘buffer-free’ Concept for GaN-on-SiC High Electron Mobility Transistors Reveals Competitive Efficiency

In a new joint study with the Chalmers University of Technology Department of Microtechnology and Nanoscience, SweGaN explored QuanFINE® epitaxial wafer performance, based on GaN HEMT technology at Chalmers, Gothenburg, Sweden. The study revealed that the new concept using a total GaN layer thickness of 250 nm does not compromise the material quality and device performance.

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r&S-5-18-20

Rohde & Schwarz First to Equip Test Instruments with New 1.35 mm E-Band Coaxial Connector

Rohde & Schwarz has implemented a new 90 GHz connector, called the E connector, in two thermal power sensors, the R&S NRP90T and R&S NRP90TN. With a precise metric fine thread, a reliable pin-gap and an integrated groove for optional push-pull locking, the 1.35 mm E connector fills a gap between the well-established 1.85 mm connector (the V-Band connector) and the 1 mm connector (the W-Band connector).


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