It is with great pleasure that we welcome you to be a part of the 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). After 39 years of the Compound Semiconductor IC Symposium (CSICS), and 32 years of the Bipolar/BiCMOS Circuit and Technology Meeting (BCTM), and the very successful debut in 2018, the new combined symposium will be held on Sunday November 3 to Wednesday November 6 at the Loews Vanderbilt Hotel in Nashville, Tenn.
BCICTS brings a long history of international gatherings where distinguished experts present their latest results in bipolar, SiGe BiCMOS, and compound semiconductor circuits, devices, and technology. There are no other events in the world where you can see leading edge bipolar/BiCMOS devices and technology, 5G ICs, GaN HPAs, InP THz PAs, optical CMOS/SiGe transceivers, GaN HEMT power devices, and advances in compact modeling all presented together.
BCICTS includes presentations from worldwide submissions on all aspects of the technology. Topics span process technology, device advances, TCAD modeling, compact modeling to IC design and testing, high-volume manufacturing, and system applications. BCICTS 2019 will also feature the very latest results in RF/microwave, mmWave, THz, analog mixed signal and optoelectronic integrated circuits.
Call for Papers Deadline: May 3, 2019