Articles by Wolfspeed, A Cree Company

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Wolfspeed Large-Signal Models: Accurately Validating RF Designs

This article will provide a top-level view of Wolfspeed's large-signal models for GaN power transistors and their application in an RF design. The article will include an overview of Wolfspeed's GaN on SiC devices, the associated large-signal models, and their advantages versus real-world devices during the development process. The piece will continue with an overview of a typical design procedure and a case study, then conclude with a discussion of the resources available to designers and how to get started.


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Wolfspeed Large-Signal Models: Accurately Validating RF Designs

This article will provide a top-level view of Wolfspeed's large-signal models for GaN power transistors and their application in an RF design. The article will include an overview of Wolfspeed's GaN on SiC devices, the associated large-signal models, and their advantages versus real-world devices during the development process. The piece will continue with an overview of a typical design procedure and a case study, then conclude with a discussion of the resources available to designers and how to get started.


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Wolfspeed releases highest power L-Band radar GaN HEMT

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will release the highest power 50V GaN HEMT demonstrated to date — its 900W CGHV14800 GaN HEMT for L-Band radar applications — to market at European Microwave Week 2016, which will take place in London, October 3–7.


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Wolfspeed announces complete C-Band radar lineup

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, announces their complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts with the market introduction of the new CGHV59070 GaN HEMT for C-Band radar systems.


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Wolfspeed on the radar screen at IMS2016

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will highlight its latest industry-leading RF and microwave devices and foundry services at this year’s IEEE International Microwave Symposium (IMS2016), scheduled for May 22–27, 2016 in San Francisco, Calif.. The company is also supporting the IMS 2016 STEM program, and several onsite student design competitions.


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Wolfspeed releases new 28 V 30 W GaN HEMT die

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11–13, 2016 in Clearwater Beach, Fla.


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