Walter A. Wohlmuth, Wayne Struble and Domingo Farías, TriQuint Semiconductor

An E-/D-mode pHEMT Process for High Performance Switch and Amplifier Components Utilizing Multi-level High Density Interconnects

A robust pseudomorphic high electron mobility transistor (pHEMT) process offering enhancement- and depletion-mode GaAs/AlGaAs/InGaAs transistors possessing 0.5-μm gate lengths with a double recess layout is presented and discussed. The E-mode devi...

June 14, 2004

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Mobile telecommunication devices continue to add functionality and complexity particularly in regards to the trend of integrating more wireless bands such as GSM, E-GSM, CDMA, W-CDMA, DCS and PCS. This trend has increased the complexity of the transmit/receive and diversity antenna switch components resulting in a migration away from...

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