Articles by RFMD

GaAs pHEMT Up-Converter: RFUV1002 and RFUV1003

RFUV1002RFMD releases updates on their GaAs pHEMT up-converters. RFUV1002 is a 9 to 14 GHz GaAs pHEMT up-converter, incorporating an integrated LO buffer amplifier, a balanced single-side band (image rejection) mixer, followed by a variable gain amplifier and a DC decoupling capacitor. RFUV1003 is a 12 to 16 GHz GaAs pHEMT up-converter, incorporating an integrated LO buffer amplifier.


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GaAs MMIC IQ Downconverters: RFRX1001 and RFRX1002

RFRX1001RFMD introduces their GaAs MMIC IQ downconverters RFRX1001 and RFRX1002. The RFRX1001 is a 10 to 15.4 GHz GaAs pHEMT downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors. The RFRX1002 is a 9 to 14GHz GaAs pHEMT downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors.


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GaAs Amplifier: RFCA3302

RFCA3302RFMD’s new RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5 V supply without the need for an external dropping resistor. The high gain, high linearity, and low distortion from 40 to 1008 MHz make this part ideal for broadband cable applications. An integrated bias circuit provides stable gain over temperature and process variations.


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RFMD releases 2.4 GHz band single-chip Zigbee front-end module

RF Micro Devices Inc. (RFMD), a designer and manufacturer of high-performance radio frequency components and compound semiconductor technologies, announced the release of the RFFM6201, a 2.4 GHz band single-chip Zigbee® front-end module (FEM) featuring an integrated power amplifier, low noise amplifier and diversity switch.
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RFMD Announces 15 W GaN Wideband Power Amplifier

RFMD’s RFHA1000 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications, such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high performance amplifier achieves...
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RFMD Releases 9 W GaN Wideband Power Amplifier

RFMD’s RFHA1003 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high performance amplifier achieves...
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RFMD Releases 9 W GaN Wideband Power Amplifier

RFMD's new RF3826 is a wideband power amplifier designed for continuous wave and pulsed applications, such as wireless infrastructure, Radar, two-way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high performance amplifier achieves high efficiency, flat gain, and large instantaneous...
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