Passive Components

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Cover Feature 2.5 V GaAs pHEMT Switches for GSM Handsets M/A-COM Lowell, MA A new line of robust GaAs pHEMT switches for operation in 2.5 V GSM handsets has been developed. These switches feature performance that is unrivaled in the industry for harmonics at 2.5 V in addition to...

Product Feature Advanced Microwave Chip Capacitor Models Modelithics Inc. Temple Terrace, FL Fig. 1 Measured S 11 of a 4.7 pF 0402 chip capacitor on different thickness FR4 substrates (series configuration). The use of computer-aided engineering (CAE) software by microwave printed circuit board (PCB) designers has become commonplace. These...

Product Feature Stainless Steel Coaxial Cable with Medium Loss at 36 GHz Fig. 1 Loss per 100 ft. vs. frequency. Anyone who has tried to use copper cable for high frequency connections in high stress environments knows that it does not hold up very well for long. Attempts to...

Technical Feature A Broadband, Four-bit, Ka-band MMIC Phase Shifter A compact, robust and broadband, four-bit, Ka-band phase shifter was designed and fabricated in a standard 0.25 m m PHEMT GaAs process. Design trade-offs, simulation versus measured results and architectures for the various bits to achieve broadband performance are discussed....

Technical Feature A High Efficiency, Low Cost Silicon Bipolar GSM Dual-band PA Module T. Johansson, P. Lundin, J. Engvall and D. Uggla Ericsson Microelectronics AB Kista, Sweden U. Hagström Ericsson Microwave Systems AB Mölndal, Sweden As the wireless communication business continues to expand, there is great demand for reducing...

Cover Story Electronically Tunable Thin Film Filters for Microwave Applications Paratek Microwave Inc. Columbia, MD Interference in wireless systems increases bit error rate (BER) and decreases the reliability and quality of service of the communication network. Interference mitigation requires filtering of the transmitted and received energies to reject all...

Technical Feature Dual Mode Broadband Hybrids: Theory and Experiment Alex D. Lapidus Microwave Communications Company International Inc. Valencia, CA A theoretical approach to both side and top wall (hybrid) couplers based on strong experimental work is developed. Broadband operation, related to dual mode propagation through the coupling section, is...

Technical Feature Implementation of a Neural Network HEMT Model into ADS Neural network algorithms have been applied to various areas of engineering and computer science. A high electron-mobility transistor (HEMT) large-signal model has been implemented in the Advanced Design System (ADS) software package using a multilayered neural network. The...

Technical Feature A Broadband Planar Isolator Using Coupled Microstrip Lines on a Magnetized Gyrotropic Substrate A new type of broadband isolator, using coupled microstrip lines on a transversely magnetized gyrotropic substrate, is proposed in this article. The nonreciprocal coupling between two microstrip lines can be used to create an...

Technical Feature Aluminum Nitride vs. Beryllium Oxide for High Power Resistor Products Michael Kettner, Patrick Biebersmith, Nelson Roldan And Balram K. Sharma Florida RF Labs Inc. Stuart, FL For the past few decades, beryllium oxide (BeO) has been the main substrate material used for RF resistors and terminations for...