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NXP GaN Fab

NXP Advances 5G with New Gallium Nitride Fab in Arizona

High-volume manufacturing facility is the most advanced GaN fab for RF in the United States

NXP Semiconductors N.V. (NASDAQ: NXPI) today announced the grand opening of its 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona, the most advanced fab dedicated to 5G RF power amplifiers in the United States. The new internal factory combines NXP’s expertise as the industry leader in RF power and its high-volume manufacturing know-how, resulting in streamlined innovation that supports the expansion of 5G base stations and advanced communication infrastructure in the industrial, aerospace and defense markets.


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