Industry News

Ask Harlan

The first edition of our new online feature
ASK HARLAN YOUR RF & MICROWAVE TECH Q&A RESOURCE You may know Harlan Howe from his twelve years as publisher and editor of Microwave Journal ®, or from his 34 years as a Microwave design engineer and engineering manager, or from his service as an IEEE fellow and past...
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Ask Harlan: August 26, 2003

Harlan Howe is back with more answers for you!
ASK HARLAN YOUR RF & MICROWAVE TECH Q&A RESOURCE You may know Harlan Howe from his twelve years as publisher and editor of Microwave Journal ®, or from his 34 years as a Microwave design engineer and engineering manager, or from his service as an IEEE fellow and past...
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Ask Harlan: September 4, 2003

Harlan Howe is back with more answers for you!
ASK HARLAN YOUR RF & MICROWAVE TECH Q&A RESOURCE You may know Harlan Howe from his twelve years as publisher and editor of Microwave Journal ®, or from his 34 years as a Microwave design engineer and engineering manager, or from his service as an IEEE fellow and past...
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Ask Harlan: September 16, 2003

A fresh baker's dozen
ASK HARLAN YOUR RF & MICROWAVE TECH Q&A RESOURCE You may know Harlan Howe from his twelve years as publisher and editor of Microwave Journal ®, or from his 34 years as a Microwave design engineer and engineering manager, or from his service as an IEEE fellow and past...
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Numerical FDTD Modeling of Silicon Integrated Spiral Inductors

This article describes the application of an electromagnetic simulator, based on the finite difference time domain (FDTD) method, to the numerical modeling of silicon integrated spiral inductors. The proposed approach is fully three-dimensional (3D) an...
The rising demand for low cost, low power personal communication systems operating up to 6 GHz makes the integration of radio frequency subsystems on monolithic silicon substrates an attractive challenge. Deep sub-micron technology allows silicon CMOS or silicon-germanium (SiGe) integrated circuits (IC) to operate at frequencies well within the...
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Wide Tuning Range RF-MEMS Varactors Fabricated Using the PolyMUMPs Foundry

Semiconductor varactor diodes are widely used throughout the electromagnetic spectrum, but their performance limits their applications. One technology being pursued by industry and academia as a potential solution to these problems is RF-MEMS varactors...
Semiconductor varactor diodes are commonly used throughout RF, microwave and millimeter-wave spectrums for a variety of applications, 1,2 including the tuning of critical circuits such as voltage-controlled oscillators (VCO), filters, matching networks and phase-shifters in RFIC and MMIC circuits. However, semiconductor varactor diodes are limited in their applications by...
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New Products

COMPONENTS Reflective SPDT Switch The model SWN-218-2DR-STD options 204F, HPR80W, LIL is a high power (80 W) cold switching SP2T solid-state switch that operates from 2 to 4 GHz (other frequencies available) with low insertion loss of less than 1.25 dB typical; SWR is 2.0, isolation is ³ 35...
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