Anritsu Company expands its 5G test portfolio with the introduction of the device under test (DUT) holder MA8179A-AK011, the first solution to support all the possible alignment options defined and permitted in 3GPP namely Alignment Options 1/2/3.
The new IEC 61000-4-3:2020 4th edition by AR RF/Microwave Instrumentation (AR) has been released and includes the following updates: multiple test signals description, EUT and cable layout info, upper frequency limitation removal and specification of characterizing the uniform field area.
Findings pave the way for commercialisation of RF Epistack on 200 m substrates to be commercially available end Q1 2021
October 26, 2020
IGaN’s technology has the unique advantage of achieving very low conduction loss meeting the industry standards for GaN HEMT on Si for RF applications. Recently processed IGaN's 150 mm GaN on Si HEMT wafers have achieved a conduction loss of 0.15 dB at room temperature and 0.23 dB at high temperature for an operating frequency of 10 GHz.