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IGaN Achieves Low-Conduction Loss with 150 mm GaN-on-Si Epiwafer for RF Applications

Findings pave the way for commercialisation of RF Epistack on 200 m substrates to be commercially available end Q1 2021

IGaN’s technology has the unique advantage of achieving very low conduction loss meeting the industry standards for GaN HEMT on Si for RF applications. Recently processed IGaN's 150 mm GaN on Si HEMT wafers have achieved a conduction loss of 0.15 dB at room temperature and 0.23 dB at high temperature for an operating frequency of 10 GHz.


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