Microwave Journal
www.microwavejournal.com/articles/6675-amptech-offers-gaas-and-inp-foundry-services

AmpTech Offers GaAs and InP Foundry Services

July 31, 2008

AmpTech Inc. announced availability of contract manufacturing foundry services at the company’s fabrication facility in Milpitas, CA. The company offers Gallium Arsenide (GaAs) and Indium Phosphide (InP) processes targeted for RFIC and Optoelectronics applications.


According to Ray Milano, president and CEO of AmpTech, “AmpTech is committed to providing foundry services, and can offer significant advantages in development time, production turn-around, and security of supply for key components in our target markets. Our manufacturing line is fully operational and is achieving excellent results -- we have shipped more than 1.5 million tested parts to our customers since initiating commercial production in the fourth quarter of 2007.”

AmpTech operates a four inch wafer fabrication line in a 15,000 square foot clean room within the company’s headquarters facility. AmpTech has production-qualified processes for GaAs MESFETs (Metal Epitaxial Semiconductor Field Effect Transistors), and InGaP HBTs (Indium Gallium Phosphide Heterojunction Bipolar Transistors). The AmpTech MESFET process offers linear gain over 85 percent of the device operating range. The HBT process is characterized by breakdown voltages in excess of 25 V. In addition, process modules have been adapted to manufacture optical devices including GaAs and InP PIN photodetectors.

According to Craig Farley, director of foundry services, “AmpTech provides front-end circuit design support, wafer processing, back-end characterization, RF and DC production testing, and die separation. Our production line includes redundancy in all key equipment to ensure a smooth and predictable material flow, and we offer fast-turnaround options for prototyping. We achieve high yields on both our HBT and MESFET processes, and offer our customers the choice of known good wafers, or known good die.”