Richardson RFPD Announces Availability of GaN MMIC PAs and Transistor for C-Band Radar Systems from Wolfspeed
Three GaN RF Devices
Richardson RFPD, Inc., an Arrow Electronics company, announced the availability and full design support capabilities for three GaN RF devices from Wolfspeed.
The CMPA5259050S and CMPA5259080S are 50 and 80 W, respectively, 5.0 to 5.9 GHz GaN MMIC power amplifiers (PAs) featuring a two-stage reactively matched amplifier design approach that enables high power and power-added efficiency to be achieved in a 5 x 5 mm surface-mount (QFN) package.
Additional key features of the power amplifiers include:
- Typical power-added efficiency
- CMPA5259050S: > 48 percent
- CMPA5259080S: > 50 percent
- Small signal gain
- CMPA5259050S: 29 dB
- CMPA5259080S: 27 dB
- Typical PSAT
- CMPA5259050S: 110 W
- CMPA5259080S: 65 W
- CMPA5259050S: up to 40 V
- CMPA5259080S: up to 28 V
- High breakdown voltage
- High temperature operation.
These devices are ideally suited for civil and military pulsed radar amplifier applications, including phased array radar. For traditional radar systems, the CMPA5259050S and CMPA5259080S power amplifiers can also be used as a driver stage for the CGHV59350F.
The CGHV59350F is 350 W, 5.2 to 5.9 GHz, 50 Ω input/output matched, GaN on SiC HEMT designed with high efficiency, high gain and wide bandwidth capabilities. It is supplied in a ceramic/metal flange package.
Additional key features of the transistor include:
- Typical output power: 470 W
- Power gain: 10.7 dB
- Typical PAE: 60 percent
- Pulsed amplitude droop: < 0.3 dB.
Evaluation boards and test fixtures are also available.