MicroWave Technology Inc. (MwT) Announces Three Families of Advanced AlGaAs/InGaAs Based Discrete Devices
MicroWave Technology Inc, (MwT), announced three families of advanced 0.25 μm AlGaAs/InGaAs based discrete devices for wide range military microwave and commercial wireless applications.
The first family of the new devices includes six high linearity GaAs devices, MwT-1F, MwT-3F, MwT-5F, MwT-7F, MwT-9F and MwT-11F, which replace the corresponding legacy MwT linear MESFETs with the same/similar die geometries and bonding diagrams. Their linear power levels, P1dB, are ranged between 21 dBm and 30 dBm with ample gain for application up to 26 GHz. These devices have outstanding linearity performance, such as IP3 and EVM, and thus are suitable for applications that demand high linearities.
The second family of the new discrete devices includes seven pHEMT devices: MwT-PH3F, MwT-PH4F, MwT-PH7F, MwT-PH8F, MwT-PH9F, MwT-PH11F and MwT-PH15F, which replace the corresponding legacy MwT pHEMT devices. These new pHEMT devices have excellent gain, power and power added efficiency and can be used for wide range applications up to 30 GHz.
The last group of new pHEMT devices includes seven devices from MwT-PH27F through MwT-PH33F, which may substitute similar pHEMT devices on the market by other discrete pHEMT device suppliers.
All the new devices are available in die and package forms. They have excellent reliability with MTBF values better than 1 x 108 hours at 150°C channel temperature. The excellent reliability, robustness and superior visual quality make these devices good candidates for various commercial, military and hi rel applications.
The S-parameters of the devices are included in the datasheet. MwT will soon add large signal matching impedances across the useful frequency ranges onto the datasheets for easiness of using MwT devices in various applications.
MwT also offers custom designed device service for replacement of devices that customers have been using for better price-performance values.