Ampleon Extends LDMOS Base Station and Multi-Carrier Line Up With the 400 W Rugged Doherty RF Power Transistor
Ampleon announced the introduction of the BLC10G27XS-400AVT 400 W asymmetric Doherty RF power transistor. Designed for use in base station multi-carrier applications operating in the 2.496 to 2.690 GHz frequency range, the -400AVT uses Ampleon's industry-respected 9th generation 28 V LDMOS process technology. Fabricated in an air cavity plastic earless SOT-1258-4 package, the Doherty transistor typically delivers a drain efficiency of 45 percent.
The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where high-power extreme mismatch conditions can often occur. The transistor has integrated ESD protection, has a low output capacitance that improves Doherty performance, and includes internal input and output impedance transformation, enabling user-friendly PCB matching to 50 ohm. The power gain specification of the BLC10G27XS-400AVT is typically 13.3 dB based on quoted test conditions. Additionally, the -400AVT has low thermal resistance attributes that yield excellent thermal stability for demanding base station applications.
Design support resources for the BLC10G27XS-400AVT include a recommended driver, the BLM9D2327S-50PB, an LDMOS two-stage integrated Doherty MMIC and the PCB layout for a Doherty production test circuit.