Microwave Journal
www.microwavejournal.com/articles/36356-integra-technologies-launches-industry-first-100-v-rf-gansic-technology-for-mission-critical-defense-applications
Integra

Integra Technologies Launches Industry First 100 V RF GaN/SiC Technology for Mission-Critical Defense Applications

Integra’s first 100 V RF GaN product delivers breakthrough output power performance of 3.6 kiloWatts at 70% efficiency for next generation avionic systems

July 13, 2021

Integra today introduced the industry’s first 100 V RF GaN/SiC technology targeting a wide-range of applications including radar, avionics, electronic warfare, industrial, scientific and medical systems. Operating at 100 V, this technology shatters RF power performance barriers by achieving 3.6 kiloWatts (kW) of output power in a single GaN transistor. Integra’s 100 V GaN gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry compared to the more commonplace 50/65 V GaN technology. Customers ultimately benefit with a smaller system footprint and lower system cost.

Suja Ramnath, Integra’s President and CEO, said “Integra’s 100 V RF GaN technology signifies a major milestone in the high-power market. This innovative technology removes the barriers limiting system performance today and allows new architectures previously not possible. We are excited that this disruptive technology will enable our customers to deliver a new generation of high-performance, multi-kiloWatt RF power solutions while reducing their design cycle time and product costs.”

Dr. Mahesh Kumar, an Aerospace and Defense radar systems architect and technology executive, said “Integra’s first to market 100 V RF GaN technology will completely redefine what’s possible for high power RF systems”. By delivering approximately two times the power compared to a 50 V GaN transistor in a single package, it will eliminate a significant number of combiners and associated electronic circuitry, resulting in lower system volume, weight and cost, and higher system efficiency.

Integra’s first 100 V RF GaN product is the IGN1011S3600, designed specifically for avionics applications. The IGN1011S3600 delivers an industry leading 3.6 kW of output power with 19dB of gain and 70% efficiency. The IGN1011S3600, based on Integra’s 100 V RF GaN, is a compelling solution for programs that require size, weight, power and cost (SWAP-C) improvements. The IGN1011S3600 100 V RF GaN/SiC is available for sampling to qualified customers.

Part Number

IGN1011S3600

Frequency Range

1030-1090 MHz

Output Power

3600 W

Efficiency

70%

Large Signal Gain

19 dB

Drain Bias

100 V