Fully-Matched GaN/SiC RF Power Transistor
IGT5259CW25 is a new RF power transistor, ideal for C-band, continuous wave (CW) applications. It is fully matched to 50-ohms, operating at the instantaneous frequency range of 5.2 to 5.9 GHz, and offers a minimum of 25 W of output power at 36V drain bias. It features 12 dB of gain, and 48% efficiency at CW conditions. (Negative gate voltage and bias sequencing are required when utilizing this transistor.)
This device comes in Integra’s new package PL44C2CPC. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
Check out this new RF device and more on Integra's brand new website!