40 W, 6 to 18 GHz, GaAs FET Power Amplifier
Exodus Advanced Communications has extended its portfolio of solid-state high-power amplifiers (HPA) with the AMP1121, a linear GaAs FET design that provides 30 W at 1 dB compression and 40 W saturated, with an instantaneous bandwidth from 6 to 18 GHz. The amplifier has 45 dB minimum power gain and 4 dB maximum peak-to-peak flatness when driven with a constant input of 0 dBm.
The AMP1121 is biased with +12 VDC and draws a maximum of 42 A. The stand-alone amplifier measures 300 mm × 300 mm × 27 mm and is also available in a standard 19-inch rack chassis configuration with self-contained air cooling and AC power. An optional controller with a front panel touch-screen LCD supports Ethernet TCP/IP, RS422 or RS485 and, if requested, GPIB or Bluetooth connectivity.
Suitable as a TWTA replacement, the solid-state HPA may be used in a variety of applications, such as EMI/RFI susceptibility testing, jammers and X-/Ku-Band communications. Other standard products include 10 and 20 W PAs within the same family of 6 to 18 GHz amplifiers and PAs up to 50 W covering 2 to
18 GHz. Exodus Advanced Communications’ full portfolio of solid-state power amplifiers covers frequency bands from 100 kHz to 51 GHz, with output power greater than 1 kW for modules and 10 kW for complete systems.
Exodus PAs use discrete LDMOS, GaAs and GaN devices assembled with hybrid chip-and-wire technology and ceramic substrates. In-house capabilities include RF circuit design; system mechanical, electrical and digital circuit design; control software development; and prototype verification.
Exodus Advanced Communications
Las Vegas, Nev.