Microwave Journal

UMS GH25 GaN Technology Gains Space Evaluation

November 30, 2017

Emphasizing the company’s committed to the development of innovative solutions for space systems, based on its in-house GaAs and GaN technologies United Monolithic Semiconductors (UMS) announced that its GH25-10 MMIC GaN HEMT technology has been successfully space evaluated and is now part of the European Preferred Part list (EPPL) supported by the European Space agency (ESA).

The reliability study and ESCC evaluation of the technology have been supported by ESA, CNES and French MoD (DGA). This GaN 0.25 μm HEMT process is optimized for high power applications up to 20 GHz. It also provides a good HEMT noise performance also enabling LNA design.

The MMIC process includes precision TaN resistors, high value TiWSi resistors, MIM capacitors, inductors, air-bridges, via-holes through the substrate and two metal layers for interconnection.