Wolfspeed Adds High Efficiency, 3 GHz, 250 W Device to 50 V GaN HEMT Family
Wolfspeed, a Cree company, extended its family of 50 V unmatched GaN HEMT RF power transistors by adding a 250 W part with a frequency range up to 3 GHz and the highest efficiency of any comparably-rated GaN device available. The CGHV40200PP is a 50 V unmatched GaN HEMT rated for 250 W, 3 GHz operation with 67 percent efficiency at PSAT and 21 dB small signal gain at 1.8 GHz.
The 50 V GaN HEMTs provide a combination of high power and high gain with high efficiency, making it possible to replace several lower power GaN HEMTs or multiple silicon LDMOS devices with a single Wolfspeed device. Packaged in a four lead, metal flange, ceramic “Gemini” package, the new 250 W GaN HEMT operates efficiently at full rated power, which reduces the need for complex thermal management systems.
Their higher power and efficiency rating, combined with a frequency range up to 3 GHz, make these devices ideal for a wide range of RF linear and compressed amplifier circuits, including those for military communications, radar (UHF, L- and S-Band), electronic warfare (EW) and RF applications in the industrial, medical and scientific (ISM) band.
The CGHV40200PP GaN HEMTs are now in volume production and are available immediately from Wolfspeed distributors Digi-Key and Mouser. For more information about the newly released CGHV40200PP, please visit www.wolfspeed.com/cghv40200pp. If you plan to attend EuMW 2017, visit Wolfspeed at Booth #195.
Compared to conventional Si and GaAs devices, Wolfspeed’s GaN on SiC devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density and wider bandwidth, all of which are critical for achieving smaller, lighter and more efficient microwave and RF products. Wolfspeed’s GaN on SiC RF devices enable next-generation amplifiers for broadband, public safety, ISM, broadcast, satellite, tactical communications, UAV data links, test instrumentation and two-way private radios.
Jim Milligan, RF and microwave director at Wolfspeed, said, “The addition of these new 250 W GaN HEMT devices to our 50 V product line enables Wolfspeed to deliver new levels of power and efficiency to our RF customers. Now, RF engineers can simplify their power amplifier designs by replacing multiple power devices with a single part, reducing their component count and making their amplifiers smaller and lighter.”