Ampleon Launches Devices Using Gen9HV 50 V Process Optimized for Base Stations
Ampleon launched a series of LDMOS RF power transistors using its Gen9HV 50 V LDMOS process. These devices are the first to use the company’s latest 50 V process, a node that has been optimized for cellular infrastructure applications to 1 GHz. Operating over a wide frequency range from 450 MHz to 960 MHz, the LDMOS transistors provide a flexible approach to handling multiple channels with a single amplifier. Capable of delivering up to 400 W from a compact 20 mm long package, the series is assembled in an air cavity package with an ultra-low Rth flange, named ACP3.
Single band operation results in more than 57 percent efficiency and 18 dB of gain with a compact and cost-effective single transistor Doherty amplifier, tested with WCDMA and LTE signal at 634 MHz. Typical applications include 4G LTE and NB-IoT base stations and remote radio heads.
The portfolio of Gen9HV LDMOS devices includes the
- BLP9H10-30 compact, 6 x 10 mm 30 W driver
- BLC9H10XS-60P, 60 W push-pull driver or final stage
- BLC9H10XS-300P 300 W push-pull final stage in a compact 20 mm long package
- BLC9H10XS-350A, 350 W asymmetric final stage in a compact 20 mm long package, and
- BLC9H10XS-600A, 600 W asymmetric final stage in a 31 mm long package.
Christophe Cugge, vice president of marketing at Ampleon, commented, “This new process, fully optimized for base station Doherty PA applications is a perfect complement to our world-class Gen10 series. It brings the best possible compromise between performance, cost and size along with the well-known ruggedness, reliability, consistency and linearity of LDMOS”.