Microwave Journal
www.microwavejournal.com/articles/28361-macom-to-showcase-industry-leading-rf-and-microwave-portfolio-at-ims2017

MACOM to Showcase Industry Leading RF and Microwave Portfolio at IMS2017

May 12, 2017

MACOM Technology Solutions Inc. will showcase its industry leading GaN on Si portfolio and other high performance MMIC and Diode products at IEEE’s International Microwave Symposium (IMS) 2017 in Honolulu, Hawaii, June 6 - 8. MACOM’s booth will feature new product solutions optimized for commercial, industrial, scientific and medical RF applications.

Visit Booth #1312 to meet with MACOM experts and learn more about:

  • Enabling Basestations: Cutting-edge GaN 60 W average Power Doherty module. 
  • RF Energy: MACOM’s Beta Toolkit enabling RF energy applications. 
  • MACOM’s High-Power GaN on Si Portfolio: Delivering performance and reliability for rugged aerospace and defense applications.
  • E-Band Solutions: Demonstrating MACOM’s E-Band ½ W Power Amplifier, along with a display of the new E-band Tx and Rx SMD Modules and the portfolio of other wideband millimeterwave products addressing the emerging 5G access, connectivity and backhaul markets.
  • The Trusted Name in High Performance Diodes: Industry-leading diode design and application-specific solutions.
  • Wideband Voltage Controlled Oscillators: Demonstrating leading performance and functionality of MACOM's new platform of wideband VCOs, octave band operation, low phase noise, stable power over temperature and improved sensitivity for test and measurement, A&D and ISM applications.
  • Wideband Power Amplifier MMIC: High performance TWA Power amplifier covering DC -50 GHz.
  • Hi-Rel and Component Devices: The latest screened products for mission critical space and aerospace applications. 

Members of MACOM’s product management, engineering and applications teams will be available at Booth #1312 to answer any inquiries or questions. MACOM experts will also be participating in various sessions throughout IMS, including:

  • Technical Session: TU3E-3: Extraction of a Trapping Model Over an Extended Bias Range for GaN and GaAs HEMTs
    • Date: Tuesday, June 6
    • Time: 14:10-14:30 HST
    • Location: Room 314
  • Microapps: AlGaAs PIN Diodes and HMIC Integration Create High Performance mmWave Switch Solutions
    • Date: Tuesday, June 6
    • Time: 16:00 HST
    • Location: Exhibition Floor, Booth 1946
  • Microapps: Integrated PIN Diode Switches Offer Improved Performance with Lower DC Power
    • Date: Wednesday, June 7
    • Time: 11:40 HST
    • Location: Exhibition Floor, Booth 1946