GaN PAs Deliver 2.5 W of Power at E-Band and W-Band at 20 Percent PAE
Millitech, a microwave brand of Smiths Interconnect, announced the release of a new gallium nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. Offering up to 2.5 W of output power and up to 20% PAE, typical gain figures range from 15 to 40 dB. Single device models are available with nearly 1W of output power, or 2-way and 4-way solid state power amplifiers (SSPAs) with up to 2.5 W of saturated output power are available. Higher power outputs are also available.
Additionally, each amplifier in the series come standard with internal voltage regulation, bias-sequencing circuitry, and reverse voltage protection.
These E-band and W-band GaN PAs can be used in applications ranging from e-band radio, remote sensing, as high power millimeter-wave sources, and are high enough quality for test and measurement applications. The high output power in E-band and W-band PAs eliminates the need for comparatively large and expensive combiners and waveguide interconnect necessary for less powerful amplifiers. For additional details visit www.millitech.com.