Microwave Journal
www.microwavejournal.com/articles/26983-silicon-carbide-power-mosfet-c2m0045170d

Silicon Carbide Power MOSFET: C2M0045170D

August 17, 2016

Wolfspeed_C2M0045170D_PR_PhotoDesigned to support 1500 V bus high-frequency applications

Richardson RFPD Inc. announced the availability and full design support capabilities for a silicon carbide power MOSFET from Wolfspeed, a Cree Company.

According to Wolfspeed, the C2M0045170D is the industry’s first 1700 V, 45 mΩ SiC MOSFET. It offers high-speed switching with low capacitances, avalanche ruggedness, fast intrinsic diode with low reverse recovery (Qrr), and it is easy to parallel and simple to drive. The new 1700 V platform enables smaller and higher-efficiency next-generation power conversion systems.

The C2M0045170Dis designed to support new 1500 V bus high-frequency power electronics applications, including renewable energy inverters, battery charging systems, auxiliary power supplies, and three-phase industrial power supplies.

Key features of the C2M0045170D include:

  • Blocking voltage: 1700
  • Current rating @ 25 ºC: 72 A
  • Rds(on) @ 25 ºC: 45 mΩ
  • Total switching losses (Esw): 3 mJ
  • Gate charge total: 188 nC
  • Maximum junction temperature: 150 ºC
  • Package: TO-247-3

To find more information or to purchase this product today online, please visit the C2M0045170D webpage. The device is also available by calling 1-800-737-6937.

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