POET demonstrates HFET building block
HFET is the second of three components needed for opto-electronic ICs
POET Technologies announced that the company has fabricated a functional HFET using the same proprietary epitaxy and integrated process sequence used to demonstrate high performance detectors.
The is the latest step in POET's plan to integrate an HFET with a photodetector and laser on a single IC. These three components are the functional blocks in an active optical cable (AOC), used for high speed interconnects in data centers. POET is targeting the growing AOC market, which is fueled by increasing data rates and the growth in cloud computing.
In a news release, the company said two of the three critical components are in place, although still being optimized: the detector and HFETs with gate lengths down to 0.25 µm.POET has encountered technical delays developing the laser, a vertical cavity self-emitting laser (VCSEL). While the electrical functionality of the VCSEL with the desired thyristor characteristics has been demonstrated, as well as lasing modes using optical pumping, electrical pumping of the VCSEL has not yet been achieved. To address this shortfall, the VCSEL epitaxial stack is being redesigned.
“We have not uncovered any fundamental show-stoppers," said Dr. Subhash Deshmukh, POET’s chief operating officer. “The characterization that has been done to date on the VCSEL points to required optimization of a few layers in a very complex and unique epitaxial stack and fine tuning of the resonant cavity mode. The new and optimized epitaxial structure is expected to be delivered to the foundry for processing over the next couple of months.”
POET (Planar Opto-Electronic Technology) is developing a III-V semiconductor technology for opto-electronic integrated circuits. The company plans to generate revenue through a combination of product sales and royalties from licensing product and process IP.