Microwave Journal
www.microwavejournal.com/articles/26439-macom-to-demo-cutting-edge-gen4-gan-portfolio-and-other-products-at-ims2016

MACOM to demo cutting edge Gen4 GaN portfolio and other products at IMS2016

May 9, 2016

MACOM Technology Solutions Inc. (MACOM), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, will showcase its industry leading GaN on Silicon portfolio and other high-performance products at IEEE’s International Microwave Symposium (IMS) 2016 in San Francisco, Calif. May 24 - 26. MACOM’s booth will feature new product solutions optimized for commercial, industrial, scientific and medical RF applications.

Visit Booth #939 to meet with MACOM experts and learn more about:

  • Base station: Cutting-edge MACOM GaN 60 W average Power Doherty module live demo with Xilinx DPD
  • RF Energy: Groundbreaking MACOM GaN that will disruptive RF energy applications
  • E-Band wideband millimeter-wave Solutions:MACOM’s new E-Band TX and RX SMD Modules and portfolio of wideband millimeter-wave products for addressing the emerging 5G access and backhaul markets
  • PIN Diode 120 W SMT T/R Switch: A high power, broadband transmit-receive switch demonstrating low TX IL, low RX IL, high RX isolation, small physical size, plastic SMT package across DC - 1 GHz for MILCOM and Land Mobile applications.
  • W-Band Power Amplifier MMIC: Power amplifier MMIC covering 80-100 GHzwith leading gain and power performance
  • Latest Hi-reliability and component products for mission critical space and aerospace applications

Members of MACOM’s product management, engineering and applications teams will be available at Booth #939 to answer any inquiries or questions. MACOM experts will also be participating in various sessions throughout IMS, including:

·         Workshop

Code: WME-4

Session: Large Signal Network Analysis: From Instrumentation Architectures to Software
         Applications for Your RF Design Flow Improvement

 Title: Use of Nonlinear Vector Network Analyzer Measurements in the Development
         of GaN on Silicon for BTS Applications

Date: Monday, May 23 2016

Time:  8:00 – 17:00 PT
 Location: TBD

Code: WMH-2
Session: E-Band Communications: Market, Technology and IC Design
Title: Transceivers for Highly Spectral Efficient Multi-Gbps radio links
Date: Monday, May 23, 2016
Time: 9:00 AM PT
Location: TBD

·         Technical Session

Session: WE1B-3
Title:  Soldered Hot-via E-band and W-Band Power Amplifier MMICs for Millimeter-wave Chip Scale Packaging
Date:  Wednesday, May 25, 2016
Time: 8:40 AM – 9:00 AM PT
Location:  Room 304

·         Microapps

Title: GaN on Silicon Power Amplifier Bias and Decoupling Techniques
Date: Wednesday, May 25, 2016
Time: 2:30 PM PT
Location: Microapps pavilion show floor

Title: GaN on Si Thermal Behavior and Its Impact on PA Performance, Reliability and Cost
Date: Thursday, May 26, 2016
Time: 10:35 AM PT
Location: Microapps pavilion show floor

Show Information:

Exhibition Hall: Moscone Convention Center
Tuesday May 24: 9:00 AM to 5:00 PM
Wednesday May 25: 9:00 AM to 6:00 PM
Thursday May 26: 9:00 AM to 3:00 PM

For more information about IMS2016: IMS 2016 Website