2 W GaN Driver Amplifier: TGA2958-SM
General purpose device suitable for commercial and defense markets
Richardson RFPD Inc. announced the availability and full design support capabilities for a 2 W GaN driver amplifier from Qorvo.
The TGA2958-SM is a packaged Ku-band amplifier fabricated on Qorvo’s 0.15 um GaN on SiC production process (QGaN15). Operating over a 13 to 18 GHz bandwidth, the TGA2598-SM delivers 2 W of saturated output power with 20 dB large signal gain and > 25% power added efficiency. This, along with >25 dB small signal gain allows it to support a variety of low power Ku-band systems or as a linear, high-voltage driver for Qorvo’s line of high-power Ku-band amplifiers.
Packaged in a 4 mm x 4 mm air-cavity QFN package for high performance and easy handling, the TGA2958-SM is fully matched to 50 ohms with integrated DC blocking capacitors on both I/O ports for simple system integration. It is an ideal general purpose RF amplifier that can provide needed functionality across both commercial and defense related markets.
According to Qorvo, additional key features of the TGA2958-SM include:
- Psat: > +33 dBm at PIN = +13 dBm
- PAE: > 25% at Pin = +13 dBm
- Small signal gain: > 25 dB
- Input return loss: > 7 dB
- Output return loss: > 13 dB
- Bias: VD = 20V, IDQ = 70 mA, VG = -2.7V typical
- Package dimensions: 4.0 mm x 4.0 mm x 1.74 mm
- Performance under CW operation
To find more information or to purchase this product today online, please visit the TGA2958-SM webpage. The devices is also available by calling 1-800-737-6937.