1700 V SiC MOSFET: C2M1000170J
Features C2MTM MOSFET technology and N-Channel enhancement mode
Richardson RFPD Inc. announced the availability from stock and full design support capabilities for a 1700 V SiC MOSFET from Wolfspeed, a Cree Company.
The C2M1000170J features high blocking voltage with low RDS (on), low parasitic inductance, ultra-low drain gate capacitance, and a separate driver source pin. It is easy to parallel and simple to drive. The new MOSFET offers higher system efficiency, smooth switching waveforms, reduced cooling requirements, and increased system reliability.
It is ideally suited for auxiliary power supplies, switch mode power supplies, and other applications involving high-voltage capacitive loads.
According to Wolfspeed, additional key features of the C2M1000170J include:
- Drain source voltage (VDSmax): 1700V
- Continuous drain current (ID) (@ 25 ºC): 5.3A
- Drain-source on-state resistance (RDS(ON)) (@ 25 ºC): 1.0Ω
- Package: low impedance, surface mount 7L D2PAK
To find more information or to purchase this product today online, please visit the C2M1000170J webpage. The device is also available by calling 1-800-737-6937.