Infineon introduces GaN transistors for cellular base station power amps
Building on our extensive cellular infrastructure experience and expertise, Infineon introduces a new family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors which enable cellular amplifier designers to build smaller, more powerful and more flexible transmitters.
In the 5G generation of cellular communications, base station power amplification will require frequencies unreachable with today's mainstream technology. Infineon is starting its transition to the necessary higher performance levels with launch of its first GaN on SiC RF power transmitters.
This first group of products operates with higher efficiency and greater power density than LDMOS at today's standard frequencies (up to 2.7 GHz). Future devices will extend frequency range up to 6 GHz.