Discrete GaN on SiC HEMT: T2G4003532
Available in flanged and flangeless low thermal resistance packages
Richardson RFPD Inc. announced the availability and full design support capabilities for a discrete GaN on SiC HEMT from TriQuint / Qorvo.
The 30 W (P3dB) T2G4003532 operates from DC to 3.5 GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The new device is suitable for military and civilian radar, professional and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications. It is available in flanged (T2G4003532-FL) and flangeless (T2G4003532-FS) low thermal resistance packages.
According to TriQuint / Qorvo, additional key features of the T2G4003532 include:
- Output power (P3dB): 28W at 3.5 GHz
- Linear gain: >16 dB at 3.5 GHz
- Operating voltage: 32V
Evaluation boards are available for the T2G4005528-FS as follows: