Microwave Journal

RF LDMOS Wideband Integrated Power Amplifier: AFIC10275N

May 21, 2015

Freescale_ AFIC10275N _PR_Photo_NLRichardson RFPD Inc. announced the availability and full design support capabilities for a new LDMOS integrated power amplifier from Freescale.

The AFIC10275N is the industry’s first RF power integrated circuitcovering the 978-1090 MHz band. It integrates two amplification stages in a plastic package, delivering 250 W with 31 dB of gain and 64% drain efficiency. The device also embeds temperature and RF sensing capabilities, reducing the need for external components.

The AFIC10275N enables smaller and lighter power amplifier transponders and is designed specifically for avionics applications, including air traffic control systems and ground-based secondary radars, and Mode S transponders, including traffic alert and collision avoidance systems and ADS-B.

It is available as a solution with a reference circuit that reduces cycle time and development costs for customers. It is available in 14-lead and 14-lead gull wing plastic packages.

According to Freescale, additional key features of the AFIC10275N include:

  • On-chip input (50 Ohm) and interstage matching
  • Single-ended
  • Integrated ESD protection
  • Low thermal resistance
  • Integrated quiescent current temperature compensation with enable/disable function (see product datasheet for additional information)

To find more information, or to purchase these products today online, please visit the AFIC10275NR1 14-lead and AFIC10275GNR1 14-lead gull wing webpages. The devices are also available by calling 1-800-737-6937.